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0.3GHz - 1GHz High Power Amplifier , 4W Rf Distribution Amplifier YP3236W

Basic Information
Place of Origin: China
Brand Name: TX TELSIG
Certification: SGS, ISO9001
Model Number: YP3236W
Minimum Order Quantity: 1
Price: Negotiation
Payment Terms: L/C, T/T, Western Union, Paypal,etc.
Detail Information
Frequency Range: 300-100MHz Operation: 3.3V~5.0V
Quiescent Current: 250mA Gain (Typ): 32dB
High Light:

rf power amplifier

,

mmic power amplifier


Product Description

TXtelsig YP3236W RF Amplifier 0.3GHz to 1GHz 4W Power Amplifier

 

The YP3236W is a three-stage high-gain power amplifier optimized for the applications in bands from
300MHz to 1000MHz. The device is manufactured on an advanced InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process. This amplifier provides a typical gain of 32dB and P1dB power of 36 dBm,
typical bias condition is 5.0V at 250 mA. The input are internally matched to 50Ω and the output require a
minimum of external matching components to cover the entire 300MHz to 1000MHz. The YP3236W is
assembled in a 16-pin, 4×4mm2, QFN package. It is internally integrated with ESD protection unit.

 

Features
■ 300~1000MHz Frequency Range
■ 3.3V~5.0V Operation
■ 32dB Gain
■ 36dBm P1dB @VCC=5V
■ 250mA Quiescent Current
■ >20dB Input Return Loss
■ Integrated Output Power Detector

 

Applications
■ Wireless data communication
■ CDMA
■ GSM
■ RFID
■ CMMB
■ TETRA

 

Ordering Information
■ YP3236W 300MHz to 1000MHz 4W Power Amplifier
■ YP3236W-EVB 400MHz~470MHz, 600MHz~800MHz, 820MHz~850MHz, 860MHz~960MHz
Evaluation PCB

 

Caution! ESD sensitive device


ESD Rating: Class1C
Value: Passes≥1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114

 

ESD Rating: Class IV
Value: Passes ≥1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101

 

MSL Rating: Level 3 at +260 °C convection
reflow
Standard: JEDEC Standard J-STD-020

 

Parameter Rating  Unit
Input RF Power 15 dBm 
Supply Voltage  -0.5 to +8.0  V 
Bias Voltage  -0.5 to +3.0 V 
DC Supply Current 2000 mA
Operating Ambient Temperature  -40 to +85 °C 
Storage Temperature  -40 to +150 °C 

 

0.3GHz - 1GHz High Power Amplifier , 4W Rf Distribution Amplifier YP3236W 0

 

 

Pin Description
Pin No.  Symbol  Description
1,3,4 NC No internal connection. May be connected to ground
2  RF IN RF input
5/8  VR1&2/ VR3 Bias current control voltage for the 1st&2ndStage/3rd Stage
6  VCTR  Power on/off control voltage, Apply >1.5VDC to power down the three power amplifier stages. Apply 0VDC to power up. If function is not desired, pin6 may be connected to GND.
7  VCCB  Supply voltage for bias circuit
13  DET Power detector provides and output voltage proportional to the RF level VCC3/RF
OUT. If function is not desired, pin13,14 may be left unterminated.
14 VCCD Supply voltage for power detector
9, 10, 11, 12 RF OUT/ VCC3  RF output/VCC3
15/16  VCC2/VCC1 Collector Supply voltage for the 2nd / 1st stage

 

Contact Details
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