5G RF Power Amplifer MMIC GaAs 3200MHz-3800MHz YP352833
The YP352833 is a high-integrated power amplifier MMIC intend for 5G wireless communication
application. This power amplifier provides a typical gain of 28 dB and P1dB of 33dBm at 3.5GHz, it's
typical quiescent bias condition is 5.0V at 280mA. The device is manufactured on an advanced
InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. The YP352833 is assembled in a 16-pin,
4mm×4mm, QFN package, it is internally integrated with ESD protection unit.