| Place of Origin: | China |
|---|---|
| Brand Name: | TX TELSIG |
| Certification: | SGS, ISO9001 |
| Model Number: | YP3236W |
| Minimum Order Quantity: | 1 |
| Price: | Negotiation |
| Payment Terms: | L/C, T/T, Paypal,etc. |
| Frequency Range: | 300-100MHz | Operation: | 3.3V~5.0V |
|---|---|---|---|
| Quiescent Current: | 250mA | Gain (Typ): | 32dB |
| High Light: | rf power amplifier,mmic power amplifier |
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TXtelsig YP3236W RF Amplifier 0.3GHz to 1GHz 4W Power Amplifier
The YP3236W is a three-stage high-gain power amplifier optimized for the applications in bands from
300MHz to 1000MHz. The device is manufactured on an advanced InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process. This amplifier provides a typical gain of 32dB and P1dB power of 36 dBm,
typical bias condition is 5.0V at 250 mA. The input are internally matched to 50Ω and the output require a
minimum of external matching components to cover the entire 300MHz to 1000MHz. The YP3236W is
assembled in a 16-pin, 4×4mm2, QFN package. It is internally integrated with ESD protection unit.
Features
■ 300~1000MHz Frequency Range
■ 3.3V~5.0V Operation
■ 32dB Gain
■ 36dBm P1dB @VCC=5V
■ 250mA Quiescent Current
■ >20dB Input Return Loss
■ Integrated Output Power Detector
Applications
■ Wireless data communication
■ CDMA
■ GSM
■ RFID
■ CMMB
■ TETRA
Ordering Information
■ YP3236W 300MHz to 1000MHz 4W Power Amplifier
■ YP3236W-EVB 400MHz~470MHz, 600MHz~800MHz, 820MHz~850MHz, 860MHz~960MHz
Evaluation PCB
Caution! ESD sensitive device
ESD Rating: Class1C
Value: Passes≥1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection
reflow
Standard: JEDEC Standard J-STD-020
| Parameter | Rating | Unit |
| Input RF Power | 15 | dBm |
| Supply Voltage | -0.5 to +8.0 | V |
| Bias Voltage | -0.5 to +3.0 | V |
| DC Supply Current | 2000 | mA |
| Operating Ambient Temperature | -40 to +85 | °C |
| Storage Temperature | -40 to +150 | °C |
| Pin Description | ||
| Pin No. | Symbol | Description |
| 1,3,4 | NC | No internal connection. May be connected to ground |
| 2 | RF IN | RF input |
| 5/8 | VR1&2/ VR3 | Bias current control voltage for the 1st&2ndStage/3rd Stage |
| 6 | VCTR | Power on/off control voltage, Apply >1.5VDC to power down the three power amplifier stages. Apply 0VDC to power up. If function is not desired, pin6 may be connected to GND. |
| 7 | VCCB | Supply voltage for bias circuit |
| 13 | DET | Power detector provides and output voltage proportional to the RF level VCC3/RF OUT. If function is not desired, pin13,14 may be left unterminated. |
| 14 | VCCD | Supply voltage for power detector |
| 9, 10, 11, 12 | RF OUT/ VCC3 | RF output/VCC3 |
| 15/16 | VCC2/VCC1 | Collector Supply voltage for the 2nd / 1st stage |
